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Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth
http://hdl.handle.net/10131/00012488
http://hdl.handle.net/10131/00012488a75bb04d-6a77-432c-8fdd-862d4cb3de4a
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
2.pdf (7.8 MB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||||
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| 公開日 | 2019-05-22 | |||||||||||||||||||
| タイトル | ||||||||||||||||||||
| タイトル | Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 言語 | ||||||||||||||||||||
| 言語 | eng | |||||||||||||||||||
| キーワード | ||||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||||
| 主題 | Minimal Fab; Chemical vapour deposition reactor; Silicon; Trichlorosilane gas concentration; Wafer rotation | |||||||||||||||||||
| 資源タイプ | ||||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||||
| アクセス権 | ||||||||||||||||||||
| アクセス権 | open access | |||||||||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||||||||
| 著者 |
Irikura, Kenta
× Irikura, Kenta
× Muroi, Mitsuko
× Yamada, Ayami
× Matsuo, Miya
× Habuka, Hitoshi× Ishida, Yuuki
ORCID
0000-0002-6567-348X
× Ikeda, Shin-Ichi
× Hara, Shiro
ORCID
0000-0002-1136-1624
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| 抄録 | ||||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||||
| 内容記述 | Effective process conditions to utilize a slim vertical silicon chemical vapour deposition reactor were studied. Based on a numerical analysis taking into account the gas flow, heat and species transport, particularly over a wide range of the trichlorosilane gas concentrations from 1% to 40% in ambient hydrogen, a heavy and cold gas was shown to quickly go downward to the hot wafer surface through the slim vertical gas channel. The gas phase near the wafer was sufficiently cooled to produce a cold wall thermal condition which enabled the trichlorosilane gas consumption only at the wafer surface, even in a non-axisymmetric and non-steady condition. The slow wafer rotation, less than 30rpm, had a considerable effect, such as that increasing the gas phase temperature gradient for suppressing the gas phase reaction. | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
| 書誌情報 |
en : Materials Science in Semiconductor Processing 巻 87, p. 13-18, ページ数 6, 発行日 2018-11-15 |
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| 収録物識別子タイプ | PISSN | |||||||||||||||||||
| 収録物識別子 | 13698001 | |||||||||||||||||||
| DOI | ||||||||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||||
| 関連識別子 | https://doi.org/10.1016/j.mssp.2018.07.006 | |||||||||||||||||||
| 著者版フラグ | ||||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||||
| 出版者 | ||||||||||||||||||||
| 出版者 | Elsevier Sci Ltd | |||||||||||||||||||
| 言語 | en | |||||||||||||||||||
