{"created":"2023-06-20T15:12:54.736184+00:00","id":9821,"links":{},"metadata":{"_buckets":{"deposit":"88034d3d-1dfe-437a-838f-0ae92da6de2c"},"_deposit":{"created_by":3,"id":"9821","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9821"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00009821","sets":["495:496"]},"author_link":["35504","35505","35503","35507","35508","35509","35506","35502"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-11-15","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"18","bibliographicPageStart":"13","bibliographicVolumeNumber":"87","bibliographic_titles":[{"bibliographic_title":"Materials Science in Semiconductor Processing"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Effective process conditions to utilize a slim vertical silicon chemical vapour deposition reactor were studied. Based on a numerical analysis taking into account the gas flow, heat and species transport, particularly over a wide range of the trichlorosilane gas concentrations from 1% to 40% in ambient hydrogen, a heavy and cold gas was shown to quickly go downward to the hot wafer surface through the slim vertical gas channel. The gas phase near the wafer was sufficiently cooled to produce a cold wall thermal condition which enabled the trichlorosilane gas consumption only at the wafer surface, even in a non-axisymmetric and non-steady condition. The slow wafer rotation, less than 30 rpm, had a considerable effect, such as that increasing the gas phase temperature gradient for suppressing the gas phase reaction.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.mssp.2018.07.006","subitem_relation_type_select":"DOI"}}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11350145","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13698001","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Irikura, Kenta"}],"nameIdentifiers":[{"nameIdentifier":"35502","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Muroi, Mitsuko"}],"nameIdentifiers":[{"nameIdentifier":"35503","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamada, Ayami"}],"nameIdentifiers":[{"nameIdentifier":"35504","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuo, Miya"}],"nameIdentifiers":[{"nameIdentifier":"35505","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Habuka, Hitoshi"}],"nameIdentifiers":[{"nameIdentifier":"35506","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"40323928","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=40323928"}]},{"creatorNames":[{"creatorName":"Ishida, Yuuki"}],"nameIdentifiers":[{"nameIdentifier":"35507","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Shin-Ichi"}],"nameIdentifiers":[{"nameIdentifier":"35508","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hara, Shiro"}],"nameIdentifiers":[{"nameIdentifier":"35509","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2020-11-15"}],"displaytype":"detail","filename":"2.pdf","filesize":[{"value":"7.8 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"2.pdf","url":"https://ynu.repo.nii.ac.jp/record/9821/files/2.pdf"},"version_id":"3bde4da9-ef62-42ec-9c6b-dfa1a2ca0bc2"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Minimal Fab","subitem_subject_scheme":"Other"},{"subitem_subject":"Chemical vapour deposition reactor","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"Trichlorosilane gas concentration","subitem_subject_scheme":"Other"},{"subitem_subject":"Wafer rotation","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-22"},"publish_date":"2019-05-22","publish_status":"0","recid":"9821","relation_version_is_last":true,"title":["Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:06:43.464361+00:00"}