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アイテム
Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications
http://hdl.handle.net/10131/0002000899
http://hdl.handle.net/10131/00020008992c87fef2-9a8c-4632-b676-09d280dfac7f
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
onishi-et-al-2024-temporary-direct-bonding-by-low-temperature-deposited-sio2-for-chiplet-applications.pdf (6.9 MB)
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| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2024-05-08 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Temporary Direct Bonding by Low Temperature Deposited SiO2 for Chiplet Applications | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| キーワード | ||||||||||||
| 主題 | Deposition, Interfaces, Plasma, Plastics, Polymers(en) | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| アクセス権 | ||||||||||||
| アクセス権 | open access | |||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
| 著者 |
Onishi, Koki
× Onishi, Koki
× Kitagawa, Hayato
× Teranishi, Shunsuke
× Uedono, Akira× Inoue, Fumihiro |
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | Die-to-wafer hybrid bonding is a crucial technology in advanced chiplet integration systems. Temporary die bonding on wafers and subsequent debonding are key aspects of this process. However, conventional polymer-based temporary bonding techniques involve several challenges such as issues related to the accurate placement of the die. Although direct bonding is a promising technology, such processes normally involve permanent bonds. The present study demonstrates an innovative temporary bonding method based on plasma-activated direct bonding and examines the associated bonding/debonding mechanisms. In this work, a dielectric bonding film was deposited at a relatively low temperature by chemical vapor deposition. This method offers several advantages, including high alignment accuracy, limited risk of die shift, and cost reduction based on removal of the carrier wafer grinding process. Wafer bonding was performed with SiO2 films deposited at low temperatures, and voids were formed at the bonding interfaces during postbond annealing. The bonding energy was sufficiently low even after annealing to allow wafer pairs to be released as a consequence of voids serving as initiation points for debonding. Desorption gas analysis established that the SiO2 films absorbed significant moisture from ambient air, which was the root cause of void formation. Die-to-wafer bonding tests confirmed the formation of voids at the bonding interfaces. This dielectric is likely to have applications as a temporary bonding material in chiplet integration systems. | |||||||||||
| 言語 | en | |||||||||||
| 内容記述 | ||||||||||||
| 内容記述タイプ | Other | |||||||||||
| 内容記述 | Acknowledgments This work was supported by the “Intensive Support for Young Promising Researchers” project, JPNP20004, from the New Energy and Industrial Technology Development Organization (NEDO) and JST, PRESTO Grant Number JPMJPR22B3, Japan. |
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| 言語 | en | |||||||||||
| 書誌情報 |
en : ACS Applied Electronic Materials 巻 6, 号 4, p. 2449-2456, ページ数 8, 発行日 2024-04-01 |
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| ISSN | ||||||||||||
| 収録物識別子タイプ | EISSN | |||||||||||
| 収録物識別子 | 26376113 | |||||||||||
| DOI | ||||||||||||
| 関連タイプ | isIdenticalTo | |||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | https://doi.org/10.1021/acsaelm.4c00114 | |||||||||||
| 権利 | ||||||||||||
| 権利情報Resource | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |||||||||||
| 権利情報 | Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International | |||||||||||
| 言語 | en | |||||||||||
| 著者版フラグ | ||||||||||||
| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | American Chemical Society (ACS) | |||||||||||
| 助成情報 | ||||||||||||
| 助成機関名 | 国立研究開発法人新エネルギー・産業技術総合開発機構 | |||||||||||
| 言語 | ja | |||||||||||
| 助成機関名 | New Energy and Industrial Technology Development Organization | |||||||||||
| 言語 | en | |||||||||||
| 言語 | en | |||||||||||
| プログラム情報 | 官民による若手研究者発掘支援事業 | |||||||||||
| 研究課題番号タイプ | JGN | |||||||||||
| 研究課題番号 | JPNP20004 | |||||||||||
| 研究課題番号URI | https://wakasapo.nedo.go.jp/seeds/seeds-2530/ | |||||||||||
| 研究課題名 | 水素を用いたポリウレア樹脂のケミカルリサイクル | |||||||||||
| 言語 | ja | |||||||||||
| 助成情報 | ||||||||||||
| 助成機関名 | 国立研究開発法人科学技術振興機構 | |||||||||||
| 言語 | ja | |||||||||||
| 助成機関名 | Japan Science and Technology Agency | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ja | |||||||||||
| プログラム情報 | 戦略的創造研究推進事業 新技術シーズ創出：さきがけ | |||||||||||
| 研究課題番号タイプ | JGN | |||||||||||
| 研究課題番号 | JPMJPR22B3 | |||||||||||
| 研究課題番号URI | https://doi.org/10.52926/JPMJPR22B3 | |||||||||||
| 研究課題名 | 3Dチップレット型ヘテロ量子デバイスの創生 | |||||||||||
| 言語 | ja | |||||||||||
