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Boron-carbon-silicon film chemical vapor deposition by boron trichloride, dichlorosilane and monomethylsilane gases
http://hdl.handle.net/10131/0002001141
http://hdl.handle.net/10131/0002001141e6fd8266-a77c-4da3-b1d8-fdba7126cb54
| 名前 / ファイル | ライセンス | アクション |
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本文へのアクセスはこちら
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||
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| 公開日 | 2024-08-30 | |||||||||||
| タイトル | ||||||||||||
| タイトル | Boron-carbon-silicon film chemical vapor deposition by boron trichloride, dichlorosilane and monomethylsilane gases | |||||||||||
| 言語 | en | |||||||||||
| 言語 | ||||||||||||
| 言語 | eng | |||||||||||
| キーワード | ||||||||||||
| 主題 | Chemical vapor deposition; Carbon incorporation; Boron trichloride; Dichlorosilane; Monomethylsilane(en) | |||||||||||
| 資源タイプ | ||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
| 資源タイプ | journal article | |||||||||||
| アクセス権 | ||||||||||||
| アクセス権 | open access | |||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||
| 著者 |
Otani, Mana
× Otani, Mana
× Muroi, Mitsuko
× Habuka, Hitoshi
ORCID
0000-0001-9931-5915
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| 抄録 | ||||||||||||
| 内容記述タイプ | Abstract | |||||||||||
| 内容記述 | A boron-carbon-silicon film was formed by an atmospheric pressure chemical vapor deposition method using a gas mixture of boron trichloride, dichlorosilane and monomethylsilane in ambient hydrogen at 800-1000 degrees C. The boron, carbon and silicon concentrations in the obtained film were about 15-30 %, 0-10 % and 50-80 %, respectively. With the increasing monomethylsilane gas flow rate, the carbon and silicon concentrations in the obtained film increased and decreased, respectively. In the obtained film, various chemical bonds between the boron, carbon and silicon existed, except for the carbon-carbon bond. The following conclusions were obtained. (i) The carbon atoms existing at the surface have a chemical bond with the boron atoms, but not with the carbon and silicon atoms. (ii) The surface intermediate compound of boron chloride helps incorporating the carbon, while that of dichlorosilane does not. (iii) The etching by the hydrogen chloride gas significantly influenced the film formation process at higher than 900 degrees C. | |||||||||||
| 言語 | en | |||||||||||
| 書誌情報 |
en : Surface and Coatings Technology 巻 448, ページ数 7, 発行日 2022-10-05 |
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| 収録物識別子タイプ | PISSN | |||||||||||
| 収録物識別子 | 02578972 | |||||||||||
| DOI | ||||||||||||
| 識別子タイプ | DOI | |||||||||||
| 関連識別子 | https://doi.org/10.1016/j.surfcoat.2022.128936 | |||||||||||
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| 出版タイプ | VoR | |||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||||||||
| 出版者 | ||||||||||||
| 出版者 | Elsevier Science SA | |||||||||||
