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Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases
http://hdl.handle.net/10131/00012489
http://hdl.handle.net/10131/00012489220f3e9b-8af5-441d-8942-a69c79c82c40
| 名前 / ファイル | ライセンス | アクション |
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3 (153.7 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||||||||||
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| 公開日 | 2019-05-22 | |||||||||||||||||
| タイトル | ||||||||||||||||||
| タイトル | Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 言語 | ||||||||||||||||||
| 言語 | eng | |||||||||||||||||
| キーワード | ||||||||||||||||||
| 言語 | en | |||||||||||||||||
| 主題Scheme | Other | |||||||||||||||||
| 主題 | silicon epitaxial growth; parallel Langmuir processes; dichlorosilane; silicon hydrides | |||||||||||||||||
| 資源タイプ | ||||||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||||||
| 資源タイプ | journal article | |||||||||||||||||
| アクセス権 | ||||||||||||||||||
| アクセス権 | open access | |||||||||||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||||||||||
| 著者 |
Yamada, Ayami
× Yamada, Ayami
× Muroi, Mitsuko
× Watanabe, Toru
ORCID
0000-0003-0129-9166
× Saito, Ayumi
× Sakurai, Ayumi
× Habuka, Hitoshi
ORCID
0000-0001-9931-5915
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| 抄録 | ||||||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||||||
| 内容記述 | The silicon epitaxial growth behaviour was studied as an application of the parallel-Langmuir process using SiH2Cl2 gas and SiH3CH3 gas. The SiH3CH3 gas was used for producing the SiHx gas in situ by thermal decomposition in the reactor. With the increasing gas concentration of SiH3CH3, several results were obtained: (i) the silicon epitaxial growth rate increased exceeding the value saturated using the SiH2Cl2, (ii) the gas phase concentrations of the chlorosilanes at the exhaust decreased, (iii) the byproduct deposition at the exhaust decreased, and (iv) the gas phase concentration of HCl at the exhaust decreased. We conclude that the SiHx helped consume the SiH2Cl2 gas for the production of a silicon epitaxial film with reductions in the byproduct deposition. Additionally, SiHx might produce SiH2Cl2 in the gas phase by reaction with HCl gas. | |||||||||||||||||
| 言語 | en | |||||||||||||||||
| 書誌情報 |
en : Semiconductor Science and Technology 巻 33, 号 9, ページ数 6, 発行日 2018-09-01 |
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| ISSN | ||||||||||||||||||
| 収録物識別子タイプ | PISSN | |||||||||||||||||
| 収録物識別子 | 02681242 | |||||||||||||||||
| DOI | ||||||||||||||||||
| 関連タイプ | isVersionOf | |||||||||||||||||
| 識別子タイプ | DOI | |||||||||||||||||
| 関連識別子 | https://doi.org/10.1088/1361-6641/aad294 | |||||||||||||||||
| 権利 | ||||||||||||||||||
| 言語 | en | |||||||||||||||||
| 権利情報Resource | https://publishingsupport.iopscience.iop.org/current-policy-author-rights-policy-for-subscription-articles-for-which-the-copyright-form-was-submitted-on-or-after-26-april-2016/ | |||||||||||||||||
| 権利情報 | This is the Accepted Manuscript version of an article accepted for publication in Superconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6641/aad294 . | |||||||||||||||||
| 著者版フラグ | ||||||||||||||||||
| 出版タイプ | AM | |||||||||||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||||||||
| 出版者 | ||||||||||||||||||
| 出版者 | IOP Publishing Ltd | |||||||||||||||||
| 言語 | en | |||||||||||||||||
