{"created":"2023-06-20T15:12:54.779070+00:00","id":9822,"links":{},"metadata":{"_buckets":{"deposit":"9930adf7-c09b-4933-a52f-8d49e9535162"},"_deposit":{"created_by":17,"id":"9822","owners":[17],"pid":{"revision_id":0,"type":"depid","value":"9822"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00009822","sets":["495:496"]},"author_link":[],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-09-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicNumberOfPages":"6","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"Semiconductor Science and Technology","bibliographic_titleLang":"en"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The silicon epitaxial growth behaviour was studied as an application of the parallel-Langmuir process using SiH2Cl2 gas and SiH3CH3 gas. The SiH3CH3 gas was used for producing the SiHx gas in situ by thermal decomposition in the reactor. With the increasing gas concentration of SiH3CH3, several results were obtained: (i) the silicon epitaxial growth rate increased exceeding the value saturated using the SiH2Cl2, (ii) the gas phase concentrations of the chlorosilanes at the exhaust decreased, (iii) the byproduct deposition at the exhaust decreased, and (iv) the gas phase concentration of HCl at the exhaust decreased. We conclude that the SiHx helped consume the SiH2Cl2 gas for the production of a silicon epitaxial film with reductions in the byproduct deposition. Additionally, SiHx might produce SiH2Cl2 in the gas phase by reaction with HCl gas.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing Ltd","subitem_publisher_language":"en"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1088/1361-6641/aad294","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"This is the Accepted Manuscript version of an article accepted for publication in Superconductor Science and Technology.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://doi.org/10.1088/1361-6641/aad294 .","subitem_rights_language":"en","subitem_rights_resource":"https://publishingsupport.iopscience.iop.org/current-policy-author-rights-policy-for-subscription-articles-for-which-the-copyright-form-was-submitted-on-or-after-26-april-2016/"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"02681242","subitem_source_identifier_type":"PISSN"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Yamada, Ayami","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Muroi, Mitsuko","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Watanabe, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"0000-0003-0129-9166","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0003-0129-9166"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Saito, Ayumi","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Sakurai, Ayumi","creatorNameLang":"en"}]},{"creatorAffiliations":[{"affiliationNames":[{"affiliationName":"Dept Chem Applicat & Life Sci, Yokohama National University","affiliationNameLang":"en"}]}],"creatorNames":[{"creatorName":"Habuka, Hitoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"0000-0001-9931-5915","nameIdentifierScheme":"ORCID","nameIdentifierURI":"https://orcid.org/0000-0001-9931-5915"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2019-07-27"}],"displaytype":"detail","fileDate":[{"fileDateType":"Issued","fileDateValue":"2018-07-26"}],"filename":"3.pdf","filesize":[{"value":"153.7 kB"}],"format":"application/pdf","licensetype":"license_5","mimetype":"application/pdf","url":{"label":"3","objectType":"fulltext","url":"https://ynu.repo.nii.ac.jp/record/9822/files/3.pdf"},"version_id":"b5d4536a-0467-4dca-911b-72cea1e7eb45"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon epitaxial growth; parallel Langmuir processes; dichlorosilane; silicon hydrides","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases","subitem_title_language":"en"}]},"item_type_id":"2","owner":"17","path":["496"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2019-05-22"},"publish_date":"2019-05-22","publish_status":"0","recid":"9822","relation_version_is_last":true,"title":["Silicon epitaxial growth accelerated by parallel Langmuir processes using SiH2Cl2 and SiH3CH3 gases"],"weko_creator_id":"17","weko_shared_id":-1},"updated":"2024-08-02T05:50:41.403420+00:00"}