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Dominant rate process of silicon surface etching by hydrogen chloride gas
http://hdl.handle.net/10131/801
http://hdl.handle.net/10131/801fd85ead1-20df-4bdc-9dc4-699182eb4e7e
名前 / ファイル | ライセンス | アクション |
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ISI-000231435400017-01.pdf (973.2 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-05-28 | |||||
タイトル | ||||||
タイトル | Dominant rate process of silicon surface etching by hydrogen chloride gas | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | etch rate, silicon, hydrogen chloride, dominant rate process | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Habuka, Hitoshi
× Habuka, Hitoshi× Suzuki, T.× Yamamoto, S.× Nakamura, A.× Takeuchi, T.× Aihara, M. |
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著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 15217 | |||||
姓名 | 羽深, 等 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1 - 100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023-1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 x 10(5) J mol(-1). The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate. (c) 2005 Elsevier B.V All rights reserved. | |||||
書誌情報 |
Thin Solid Films 巻 489, 号 1/2, p. 104-110, 発行日 2005-01-10 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00406090 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00863068 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.tsf.2005.04.121 | |||||
権利 | ||||||
権利情報 | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structual formatting and other quality control mechanisms , may not be reflected in this document. Changes may have been to this work since it was submitted for publication. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | Elsevier Science S.A.. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | postprint |