{"created":"2023-06-20T15:07:54.360112+00:00","id":3580,"links":{},"metadata":{"_buckets":{"deposit":"8c3961b5-79f6-4b4a-a40b-e64b116bb546"},"_deposit":{"created_by":3,"id":"3580","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"3580"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00003580","sets":["495:496"]},"author_link":["15214","15212","15217","15211","15216","15215","15213"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-01-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1/2","bibliographicPageEnd":"110","bibliographicPageStart":"104","bibliographicVolumeNumber":"489","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films"}]}]},"item_2_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_42":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"postprint","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1 - 100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023-1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 x 10(5) J mol(-1). The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate. (c) 2005 Elsevier B.V All rights reserved.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{}]}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science S.A.."}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.tsf.2005.04.121","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"NOTICE: This is the author's version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structual formatting and other quality control mechanisms , may not be reflected in this document. Changes may have been to this work since it was submitted for publication."}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00863068","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00406090","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Habuka, Hitoshi"}],"nameIdentifiers":[{"nameIdentifier":"15211","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Suzuki, T."}],"nameIdentifiers":[{"nameIdentifier":"15212","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamamoto, S."}],"nameIdentifiers":[{"nameIdentifier":"15213","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, A."}],"nameIdentifiers":[{"nameIdentifier":"15214","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, T."}],"nameIdentifiers":[{"nameIdentifier":"15215","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Aihara, M."}],"nameIdentifiers":[{"nameIdentifier":"15216","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-09-15"}],"displaytype":"detail","filename":"ISI-000231435400017-01.pdf","filesize":[{"value":"973.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ISI-000231435400017-01.pdf","url":"https://ynu.repo.nii.ac.jp/record/3580/files/ISI-000231435400017-01.pdf"},"version_id":"e80ded62-d0a9-4c51-82ad-6bf0b5175314"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"etch rate","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon","subitem_subject_scheme":"Other"},{"subitem_subject":"hydrogen chloride","subitem_subject_scheme":"Other"},{"subitem_subject":"dominant rate process","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Dominant rate process of silicon surface etching by hydrogen chloride gas","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Dominant rate process of silicon surface etching by hydrogen chloride gas"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-05-28"},"publish_date":"2007-05-28","publish_status":"0","recid":"3580","relation_version_is_last":true,"title":["Dominant rate process of silicon surface etching by hydrogen chloride gas"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:37:07.455932+00:00"}