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Terahertz-field-induced carrier generation in Bi1−xSbx Dirac electron systems
http://hdl.handle.net/10131/00012085
http://hdl.handle.net/10131/000120851e37536a-592e-4713-8b33-553a11c6b808
名前 / ファイル | ライセンス | アクション |
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PRB98.214302.pdf (1.6 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2018-12-05 | |||||
タイトル | ||||||
タイトル | Terahertz-field-induced carrier generation in Bi1−xSbx Dirac electron systems | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Katayama, I.
× Katayama, I.× Kawakami, H.× Hagiwara, T.× Arashida, Y.× Minami, Y× Nien, L.-W.× Handegard, O. S.× Nagao, T.× Kitajima, M.× Takeda, J. |
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著者所属 | ||||||
Yokohama National University | ||||||
著者所属 | ||||||
Yokohama National University | ||||||
著者所属 | ||||||
Yokohama National University | ||||||
著者所属 | ||||||
Yokohama National University | ||||||
著者所属 | ||||||
Yokohama National University, Tokushima University | ||||||
著者所属 | ||||||
National Institute for Materials Science (NIMS) | ||||||
著者所属 | ||||||
National Institute for Materials Science (NIMS), Hokkaido University | ||||||
著者所属 | ||||||
National Institute for Materials Science (NIMS), Hokkaido University | ||||||
著者所属 | ||||||
Yokohama National University, National Institute for Materials Science (NIMS) | ||||||
著者所属 | ||||||
Yokohama National University | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Terahertz-field-induced carrier generation processes were investigated in Dirac electron systems, single-crystalline bismuth antimony alloy thin films (Bi1−xSbx; 0≤x≤0.16). This investigation was performed by precisely tuning, via the substituent ratio x, the band structure of the films from that associated with a semimetal to that characteristic of a narrow-gap semiconductor. Terahertz-field-induced absorption was clearly observed within a few picoseconds after the terahertz pump-pulse illumination of Bi1−xSbx semimetal and semiconductor samples. The field-strength dependence of the induced absorption was compared with the calculated Zener tunneling probability in the Dirac-like band dispersion. Through this comparison, the mechanism of the induced absorption was attributed to the carrier generation via the terahertz-field-induced Zener tunneling. The tunneling occurred in subpicosecond timescales even at room temperature, demonstrating that Bi1−xSbx thin films are promising for future high-speed electronics and the investigation of universal ultrafast tunneling dynamics. | |||||
書誌情報 |
Physical Review B 巻 98, 号 21, p. 214302-1-214302-5, 発行日 2018-12-03 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 24699950 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1103/PhysRevB.98.214302 | |||||
権利 | ||||||
権利情報 | ©2018 American Physical Society | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
出版者 | American Physical Society |