{"created":"2023-06-20T15:12:36.731163+00:00","id":9416,"links":{},"metadata":{"_buckets":{"deposit":"2caddec4-9cdd-4c09-99e2-e7f0a0659bc3"},"_deposit":{"created_by":3,"id":"9416","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9416"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00009416","sets":["495:496"]},"author_link":["19618","34876","34883","34878","34880","34881","34882","34877","34879","9"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-12-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"21","bibliographicPageEnd":"214302-5","bibliographicPageStart":"214302-1","bibliographicVolumeNumber":"98","bibliographic_titles":[{"bibliographic_title":"Physical Review B"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Terahertz-field-induced carrier generation processes were investigated in Dirac electron systems, single-crystalline bismuth antimony alloy thin films (Bi1−xSbx; 0≤x≤0.16). This investigation was performed by precisely tuning, via the substituent ratio x, the band structure of the films from that associated with a semimetal to that characteristic of a narrow-gap semiconductor. Terahertz-field-induced absorption was clearly observed within a few picoseconds after the terahertz pump-pulse illumination of Bi1−xSbx semimetal and semiconductor samples. The field-strength dependence of the induced absorption was compared with the calculated Zener tunneling probability in the Dirac-like band dispersion. Through this comparison, the mechanism of the induced absorption was attributed to the carrier generation via the terahertz-field-induced Zener tunneling. The tunneling occurred in subpicosecond timescales even at room temperature, demonstrating that Bi1−xSbx thin films are promising for future high-speed electronics and the investigation of universal ultrafast tunneling dynamics.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1103/PhysRevB.98.214302","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"©2018 American Physical Society"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"24699950","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University, Tokushima University"},{"subitem_text_value":"National Institute for Materials Science (NIMS)"},{"subitem_text_value":"National Institute for Materials Science (NIMS), Hokkaido University"},{"subitem_text_value":"National Institute for Materials Science (NIMS), Hokkaido University"},{"subitem_text_value":"Yokohama National University, National Institute for Materials Science (NIMS)"},{"subitem_text_value":"Yokohama National University"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Katayama, I."}],"nameIdentifiers":[{"nameIdentifier":"19618","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80432532","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80432532"}]},{"creatorNames":[{"creatorName":"Kawakami, H."}],"nameIdentifiers":[{"nameIdentifier":"34876","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hagiwara, T."}],"nameIdentifiers":[{"nameIdentifier":"34877","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arashida, Y."}],"nameIdentifiers":[{"nameIdentifier":"34878","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Minami, Y"}],"nameIdentifiers":[{"nameIdentifier":"34879","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nien, L.-W."}],"nameIdentifiers":[{"nameIdentifier":"34880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Handegard, O. S."}],"nameIdentifiers":[{"nameIdentifier":"34881","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagao, T."}],"nameIdentifiers":[{"nameIdentifier":"34882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kitajima, M."}],"nameIdentifiers":[{"nameIdentifier":"34883","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeda, J."}],"nameIdentifiers":[{"nameIdentifier":"9","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"60202165","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=60202165"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-12-05"}],"displaytype":"detail","filename":"PRB98.214302.pdf","filesize":[{"value":"1.6 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"PRB98.214302.pdf","url":"https://ynu.repo.nii.ac.jp/record/9416/files/PRB98.214302.pdf"},"version_id":"6529c2a3-a25e-49b4-954b-d8df03d77d32"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Terahertz-field-induced carrier generation in Bi1−xSbx Dirac electron systems","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Terahertz-field-induced carrier generation in Bi1−xSbx Dirac electron systems"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-12-05"},"publish_date":"2018-12-05","publish_status":"0","recid":"9416","relation_version_is_last":true,"title":["Terahertz-field-induced carrier generation in Bi1−xSbx Dirac electron systems"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-20T19:27:33.232771+00:00"}