{"created":"2023-06-20T15:12:54.693377+00:00","id":9820,"links":{},"metadata":{"_buckets":{"deposit":"aa6a32da-04fc-44f1-b794-2ddecc6706fd"},"_deposit":{"created_by":3,"id":"9820","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9820"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00009820","sets":["495:496"]},"author_link":["35501","35500","35497","35499","35498","35496"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"197","bibliographicPageStart":"192","bibliographicVolumeNumber":"88","bibliographic_titles":[{"bibliographic_title":"Materials Science in Semiconductor Processing"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"A silicon epitaxial growth process in a trichlorosilane-hydrogen system was evaluated using a quartz crystal microbalance (QCM) placed at the exhaust of a chemical vapor deposition reactor designed for the Minimal Fab. The QCM showed two types of the frequency decrease behaviors, that is, i) a quick shift due to the gas property change caused by the trichlorosilane gas introduction into the ambient hydrogen and ii) the continuous and gradual decrease due to the byproduct deposition on the QCM surface during the silicon epitaxial growth. Because both i) and ii) showed a relationship with the silicon epitaxial growth rate, the in-situ information obtained by the QCM was expected for the real time monitoring of the film deposition process.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.1016/j.mssp.2018.08.014","subitem_relation_type_select":"DOI"}}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA11350145","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13698001","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"Yokohama National University"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"},{"subitem_text_value":"National Institutes of Advanced Science and Technology, Minimal Fab Development Association"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Muroi, Mitsuko"}],"nameIdentifiers":[{"nameIdentifier":"35496","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsuo, Miya"}],"nameIdentifiers":[{"nameIdentifier":"35497","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Habuka, Hitoshi"}],"nameIdentifiers":[{"nameIdentifier":"35498","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"40323927","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=40323927"}]},{"creatorNames":[{"creatorName":"Ishida, Yuuki"}],"nameIdentifiers":[{"nameIdentifier":"35499","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ikeda, Shin-Ichi"}],"nameIdentifiers":[{"nameIdentifier":"35500","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hara, Shiro"}],"nameIdentifiers":[{"nameIdentifier":"35501","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-01-01"}],"displaytype":"detail","filename":"1.pdf","filesize":[{"value":"195.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1.pdf","url":"https://ynu.repo.nii.ac.jp/record/9820/files/1.pdf"},"version_id":"f68e95d3-4ee4-4433-b5dc-6818f37dd41a"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Quartz crystal microbalance","subitem_subject_scheme":"Other"},{"subitem_subject":"Silicon epitaxial growth","subitem_subject_scheme":"Other"},{"subitem_subject":"Minimal Fab","subitem_subject_scheme":"Other"},{"subitem_subject":"in situ monitor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-23"},"publish_date":"2019-05-23","publish_status":"0","recid":"9820","relation_version_is_last":true,"title":["Real time evaluation of silicon epitaxial growth process by exhaust gas measurement using quartz crystal microbalance"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:06:42.528674+00:00"}