{"created":"2023-06-20T15:12:35.190256+00:00","id":9380,"links":{},"metadata":{"_buckets":{"deposit":"83ca2a51-d473-442f-9302-e63f284e8cb7"},"_deposit":{"created_by":3,"id":"9380","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"9380"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00009380","sets":["495:496"]},"author_link":["34741","714","34738","34736","34740","34737","34734","34735"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"055027-12","bibliographicPageStart":"055027-1","bibliographicVolumeNumber":"8","bibliographic_titles":[{"bibliographic_title":"AIP Advances"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate surfaces. The sheath control plate consisted of an array of inclined trenches, being set into place on the rf-biased electrode, where their widths and depths were chosen in such a way that the sheath edge was pushed out of the trenches. The distortion of potential distributions and the consequent deflection of ion trajectories above and in the trenches were then analyzed based on electrostatic particle-in-cell simulations of the plasma sheath, to evaluate the angular distributions of ion fluxes incident on substrates pasted on sidewalls and/or at the bottom of the trenches. Experiments showed well-defined periodic sawtooth-like ripples with their wave vector oriented parallel to the direction of ion incidence at intermediate off-normal angles, while relatively weak corrugations or ripplelike structures with the wave vector perpendicular to it at high off-normal angles. Possible mechanisms for the formation of surface ripples during plasma etching are discussed with the help of Monte Carlo simulations of plasma-surface interactions and feature profile evolution. The results indicate the possibility of providing an alternative to ion beam sputtering for self-organized formation of ordered surface nanostructures.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1063/1.5017070","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license(http://creativecommons.org/licenses/by/4.0/).https://doi.org/10.1063/1.5017070"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"21583226","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Present address: Sony Semiconductor Solutions Corporation, Device Development Division"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Present address: Nippon Steel & Sumitomo Metal Corporation, Nagoya Works"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Present address: Nippon Steel & Sumitomo Metal Corporation, Kimitsu Works"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Present address: Nippon Steel & Sumitomo Metal Corporation, Nagoya Works"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Present address: Toshiba Corporation Semiconductor & Storage Products Company, Center for Semiconductor Research & Development"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Present address: Division of Systems Research, Faculty of Engineering, Yokohama National University"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University"},{"subitem_text_value":"Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Joining and Welding Research Institute, Osaka University"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nakazaki, Nobuya"}],"nameIdentifiers":[{"nameIdentifier":"34734","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Matsumoto, Haruka"}],"nameIdentifiers":[{"nameIdentifier":"34735","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sonobe, Soma"}],"nameIdentifiers":[{"nameIdentifier":"34736","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hatsuse, Takumi"}],"nameIdentifiers":[{"nameIdentifier":"34737","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tsuda, Hirotaka"}],"nameIdentifiers":[{"nameIdentifier":"34738","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takao, Yoshinori"}],"nameIdentifiers":[{"nameIdentifier":"714","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"80552661","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=80552661"}]},{"creatorNames":[{"creatorName":"Eriguchi, Koji"}],"nameIdentifiers":[{"nameIdentifier":"34740","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ono, Kouichi"}],"nameIdentifiers":[{"nameIdentifier":"34741","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2018-11-06"}],"displaytype":"detail","filename":"1.5017070.pdf","filesize":[{"value":"4.3 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"1.5017070.pdf","url":"https://ynu.repo.nii.ac.jp/record/9380/files/1.5017070.pdf"},"version_id":"04b0d869-7631-455e-81ce-40abfb6c2717"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ripple formation on Si surfaces during plasma etching in Cl2","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ripple formation on Si surfaces during plasma etching in Cl2"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-11-06"},"publish_date":"2018-11-06","publish_status":"0","recid":"9380","relation_version_is_last":true,"title":["Ripple formation on Si surfaces during plasma etching in Cl2"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:33:03.303140+00:00"}