@article{oai:ynu.repo.nii.ac.jp:00007624,
 author = {Nakazaki, Nobuya and Matsumoto, Haruka and Tsuda, Hirotaka and Takao, Yoshinori and Eriguchi, Koji and Ono, Kouichi},
 issue = {20},
 journal = {Applied Physics Letters},
 month = {Nov},
 note = {Article, Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy in the range Ei ≈ 20–500 eV. Experiments showed that smoothing of initially rough surfaces as well as non-roughening of initially planar surfaces can be achieved by plasma etching in the smoothing mode (at high Ei) with some threshold for the initial roughness, above which laterally extended crater-like features were observed to evolve during smoothing. Monte Carlo simulations of the surface feature evolution indicated that the smoothing/non-roughening is attributed primarily to reduced effects of the ion scattering or reflection from microscopically roughened feature surfaces on incidence.},
 pages = {204101-1--204101-5},
 title = {Surface smoothing during plasma etching of Si in Cl2},
 volume = {109},
 year = {2016}
}