@article{oai:ynu.repo.nii.ac.jp:00004169,
 author = {Habuka, Hitoshi and Tsuji, Masaki and Hirooka, Azumi},
 journal = {JOURNAL OF CRYSTAL GROWTH},
 month = {Sep},
 note = {The low-temperature chemical vapor deposition process of silicon carbide (SiC) on an aluminum surface was developed. In order to prepare the reactive substrate surface, a silicon interlayer containing silicon dimers at its surface was formed using trichlorosilane gas at 600 oC. Next, the SiC thin film was formed at room temperature using monomethylsilane gas. Silicon, carbon and silicon-carbon bond in the obtained film were detected by various evaluations. The SiC film was amorphous and about 5-nm thick.},
 pages = {523--526},
 title = {Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas},
 volume = {401},
 year = {2014}
}