@article{oai:ynu.repo.nii.ac.jp:00004042,
 author = {Nguyen, Hong C. and Sakai, Yuya and Shinkawa, Mizuki and Ishikura, Norihiro and Baba, Toshihiko},
 issue = {14},
 journal = {Optics express},
 month = {Jul},
 note = {application/pdf, We report the first experimental demonstration of 10 Gb/s modulation in a photonic crystal silicon optical modulator. The device consists of a 200 μm-long SiO_2-clad photonic crystal waveguide, with an embedded p-n junction, incorporated into an asymmetric Mach-Zehnder interferometer. The device is integrated on a SOI chip and fabricated by CMOS-compatible processes. With the bias voltage set at 0 V, we measure a V_πL=0.028 V・cm. Optical modulation is demonstrated by electrically driving the device with a 2^31-1 bit non-return-to-zero pseudo-random bit sequence signal. An open eye pattern is observed at bitrates of 10 Gb/s and 2 Gb/s, with and without pre-emphasis of the drive signal, respectively.},
 pages = {13000--13007},
 title = {10 Gb/s operation of photonic crystal silicon optical modulators},
 volume = {19},
 year = {2011}
}