@article{oai:ynu.repo.nii.ac.jp:00004033,
 author = {Mizuta, Eiichi and Watanabe, Hideki and Baba, Toshihiko},
 issue = {8A},
 journal = {Japanese journal of applied physics},
 month = {Aug},
 note = {application/pdf, post print, An ultralow group velocity of light in a III-V semiconductor photonic crystal (PC) waveguide is expected to enhance the optical gain per unit length of the waveguide. We discuss the possibility of a compact semiconductor optical amplifier that utilizes a single-line-defect PC waveguide fabricated from an all semiconductor low-Δ slab with deep airholes. From photonic band and traveling-wave rate equation analysis, a gain of larger than 20 dB is expected in a short active PC waveguide of 10 μm length, although the waveguide mode has a large radiation loss. We experimentally demonstrate such a waveguide in the passive wavelength regime. The waveguide is fabricated into a GaInAsP/InP wafer with high-mesa input/output waveguides. We show that the observed transmission characteristics of light correspond well to the photonic band theory.},
 pages = {6116--6120},
 title = {All semiconductor low-Δ photonic crystal waveguide for semiconductor optical amplifier},
 volume = {45},
 year = {2006}
}