@article{oai:ynu.repo.nii.ac.jp:00003936,
 author = {Nagasawa, K. and Nakatsugawa, Hiroshi and Okamoto, Y.},
 journal = {Proceedings of the 6th European Conference on Thermoelectrics (ECT2008) 2-4 July},
 month = {},
 note = {application/pdf, SiC/Si/Au compostites with polyslastyrene (PSS) additive as the sintering aids have been investigated the thermoelectric properties and crystalline characteristics for application of Peltier Self-Cooling Semiconductor Device. We desided the composition of SiC/Si/Au system showing high power factor, furthermore Hall coefficient measurements at room temperature revealed that the increase of electrical conductivity originated the rise of mobility. Scanning electron mocroscope observations confirmed the grain growth by virtue of Si additive. Elemental distributions in order of mocro scale ware cleared by electron probe mocro analyzer. High temperature XRD measurement revealed that the appearance pf marginal peaks occurred as the rise of temperature for 1173K.},
 pages = {P1-16-1--P1-16-4},
 title = {Thermoelectric Properties and Crystal Structures of Au doped SiC/Si Composites},
 year = {2008}
}