@article{oai:ynu.repo.nii.ac.jp:00003932,
 author = {Nakatsugawa, Hiroshi and Nagasawa, K. and Okamoto, Y. and Yamaguchi, S. and Fukuda, S. and Kitagawa, H.},
 journal = {Proceedings of the 27th International Conference on Thermoelectrics (ICT2008) 3-7 August},
 month = {},
 note = {application/pdf, Silicon semiconductor devices such as Power MOSFET,IGBT and CPU are the most important devices to give us modern life. When we use these devices in the electric circuit,the heat removal and the cooling down are one of the most important issues because the silicon device must be the temperature of 423K or lower to keep its function. Recently Yamaguchi et al. propose the self-cooling device, which does not need to use the additional power circuits because the Peltier cooling is done by its selfcurrent. This technology carries out the Peltier cooling with the use of flowing current in silicon power device itself by using thermoelectric material. In particular, silicon carbide (SiC) is one of the candidate material since SiC has the higher electrical conductivity, thermal conductivity and Seebeck coefficient different from conventional thermoelectric material. The purpose of this study is to investigate the effects of PSS and Au addition on the thermoelectric properties in ρ-type semiconductor SiC/Si/Au composites in order to apply the self-cooling semiconductor device.},
 title = {The effects of PSS and Au addition on thermoelectric properties in β-SiC/Si composites},
 year = {2008}
}