{"created":"2023-06-20T15:07:55.556873+00:00","id":3608,"links":{},"metadata":{"_buckets":{"deposit":"ff82472d-5715-4f9f-82d0-868c5c25b7e0"},"_deposit":{"created_by":3,"id":"3608","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"3608"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00003608","sets":["495:496"]},"author_link":["15364","15362","15361","15360","15365","15363"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-05-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1/3","bibliographicPageEnd":"332","bibliographicPageStart":"327","bibliographicVolumeNumber":"266","bibliographic_titles":[{"bibliographic_title":"Journal of Crystal Growth"}]}]},"item_2_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_42":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"postprint","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"From the viewpoint to obtain a very flat semiconductor silicon epitaxial film, the influence of an epitaxial reactor design on a local thickness profile of a silicon epitaxial film is studied. The characteristic thickness valleys formed in a trichlorosilane hydrogen system using a horizontal cold wall single-wafer epitaxial reactor at atmospheric pressure are concluded to have a quantitative relationship with the local decrease in the transport rate of trichlorosilane induced by the increase in the velocity, the increase in the temperature and the decrease in the trichlorosilane concentration in the gas phase, which are induced by the gas inlet design. (C) 2004 Elsevier B.V. All rights reserved.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{}]}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science B.V."}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.jcrysgro.2004.02.062","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"NOTICE: This is the author's version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structual formatting and other quality control mechanisms , may not be reflected in this document. Changes may have been to this work since it was submitted for publication."}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00696341","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00220248","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Habuka, Hitoshi"}],"nameIdentifiers":[{"nameIdentifier":"15360","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukaya, S."}],"nameIdentifiers":[{"nameIdentifier":"15361","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sawada, A."}],"nameIdentifiers":[{"nameIdentifier":"15362","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, T."}],"nameIdentifiers":[{"nameIdentifier":"15363","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Aihara, M."}],"nameIdentifiers":[{"nameIdentifier":"15364","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-09-16"}],"displaytype":"detail","filename":"ISI-000221489900045-01.pdf","filesize":[{"value":"516.6 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ISI-000221489900045-01.pdf","url":"https://ynu.repo.nii.ac.jp/record/3608/files/ISI-000221489900045-01.pdf"},"version_id":"bb5dbc81-f4f2-4a59-8d8a-4e068e0f192e"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"flatness","subitem_subject_scheme":"Other"},{"subitem_subject":"growth rate","subitem_subject_scheme":"Other"},{"subitem_subject":"transport phenomena","subitem_subject_scheme":"Other"},{"subitem_subject":"silicon epitaxial growth","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Formation mechanism of local thickness profile of silicon epitaxial film","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation mechanism of local thickness profile of silicon epitaxial film"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-05-28"},"publish_date":"2007-05-28","publish_status":"0","recid":"3608","relation_version_is_last":true,"title":["Formation mechanism of local thickness profile of silicon epitaxial film"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:37:21.988845+00:00"}