@article{oai:ynu.repo.nii.ac.jp:00003608,
 author = {Habuka, Hitoshi and Fukaya, S. and Sawada, A. and Takeuchi, T. and Aihara, M.},
 issue = {1/3},
 journal = {Journal of Crystal Growth},
 month = {May},
 note = {application/pdf, postprint, From the viewpoint to obtain a very flat semiconductor silicon epitaxial film, the influence of an epitaxial reactor design on a local thickness profile of a silicon epitaxial film is studied. The characteristic thickness valleys formed in a trichlorosilane hydrogen system using a horizontal cold wall single-wafer epitaxial reactor at atmospheric pressure are concluded to have a quantitative relationship with the local decrease in the transport rate of trichlorosilane induced by the increase in the velocity, the increase in the temperature and the decrease in the trichlorosilane concentration in the gas phase, which are induced by the gas inlet design. (C) 2004 Elsevier B.V. All rights reserved.},
 pages = {327--332},
 title = {Formation mechanism of local thickness profile of silicon epitaxial film},
 volume = {266},
 year = {2004}
}