{"created":"2023-06-20T15:07:55.217174+00:00","id":3600,"links":{},"metadata":{"_buckets":{"deposit":"ae24ce00-4ca0-43f5-8e8f-8bdfcd0fd3d9"},"_deposit":{"created_by":3,"id":"3600","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"3600"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00003600","sets":["495:496"]},"author_link":["15331","15329","15328","15330","15332","15327","15326"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2006-08-30","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1/2","bibliographicPageEnd":"197","bibliographicPageStart":"193","bibliographicVolumeNumber":"514","bibliographic_titles":[{"bibliographic_title":"Thin Solid Films"}]}]},"item_2_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_2_description_42":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"postprint","subitem_description_type":"Other"}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Etch rates of polycrystalline beta-silicon carbide (SiC) substrate in a wide range from less than one to more than 10 mu m/min are obtained using chlorine trifluoride gas in ambient nitrogen at 673-973 K and atmospheric pressure in a horizontal reactor. Over the chlorine trifluoride gas concentrations of 10-100% used in this study, the etch rate increases at the substrate temperatures between 673 and 773 K. Additionally, the etch rate at temperatures higher than 773 K is independent of the substrate temperature, similar to the one obtained using chlorine trifluoride gas concentration of 100%. The root means square roughness of etched surface tends to be small at high temperatures and high chlorine trifluoride gas concentrations. The polycrystalline beta-SiC etch rate can be adjusted using a combination of gas flow rate, chlorine trifluoride gas concentration, and substrate temperature in order to obtain surfaces suitable for various purposes. (c) 2006 Elsevier B.V All rights reserved.","subitem_description_type":"Abstract"}]},"item_2_full_name_3":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{}]}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier Science S.A.."}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.tsf.2006.02.099","subitem_relation_type_select":"DOI"}}]},"item_2_rights_14":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"NOTICE: This is the author's version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structual formatting and other quality control mechanisms , may not be reflected in this document. Changes may have been to this work since it was submitted for publication."}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00863068","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00406090","subitem_source_identifier_type":"ISSN"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Habuka, Hitoshi"}],"nameIdentifiers":[{"nameIdentifier":"15326","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Oda, S."}],"nameIdentifiers":[{"nameIdentifier":"15327","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukai, Y."}],"nameIdentifiers":[{"nameIdentifier":"15328","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fukae, K."}],"nameIdentifiers":[{"nameIdentifier":"15329","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeuchi, T."}],"nameIdentifiers":[{"nameIdentifier":"15330","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Aihara, M."}],"nameIdentifiers":[{"nameIdentifier":"15331","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2016-09-15"}],"displaytype":"detail","filename":"ISI-000239218400028-01.pdf","filesize":[{"value":"2.9 MB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"ISI-000239218400028-01.pdf","url":"https://ynu.repo.nii.ac.jp/record/3600/files/ISI-000239218400028-01.pdf"},"version_id":"3cb89d54-a508-4469-9bae-3ccd496325a6"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"silicon carbide","subitem_subject_scheme":"Other"},{"subitem_subject":"etching","subitem_subject_scheme":"Other"},{"subitem_subject":"surface roughness","subitem_subject_scheme":"Other"},{"subitem_subject":"surface morphology","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2007-05-28"},"publish_date":"2007-05-28","publish_status":"0","recid":"3600","relation_version_is_last":true,"title":["Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T19:37:20.106413+00:00"}