@article{oai:ynu.repo.nii.ac.jp:02001047,
 author = {Yahagi, Tsukaho and Ohji, Tatsuki and Yamaguchi, Hiroshi and Takahashi, Takuma and Nakano, Hiromi and Iijima, Motoyuki and Tatami, Junichi},
 journal = {ADVANCED ENGINEERING MATERIALS},
 month = {Mar},
 note = {In this study, the deformation behaviors and mechanical properties of 4H-SiC single crystals are investigated using microcantilever beam specimens with two different sizes, A and B (A < B). Tensile stress is applied along <1120> direction. Plastic deformation, or nonlinearity, is observed in the stress–strain curves, and yield stress, or proportional limit, coincides between the two specimens at ≈25 ± 2 GPa. Scanning transmission electron microscopy and transmission electron microscopy studies show that the plastic deformation is due to dislocation activities; multiple-dislocation pileup areas are observed in both the specimens. Assuming {1100}/<1120> prismatic slip which most plausibly occurs in the <1120> stress application, the critical resolved shar stress is estimated to be 10.9 GPa, which agrees well with the previous studies. Measured fracture strength is 41.9 ± 2.8 and 33.5 ± 2.4 GPa for the A and B, respectively. Dislocation–fracture relationship is discussed on the basis of dislocation-based fracture mechanics, etc. It is suggested that cracks form within the multiple-dislocation pileup area, by interaction with dislocation pileups, and act as fracture origins. A's strength is close to an ideal tensile strength of 4H-SiC in the <1120> direction, 47–55 GPa.},
 title = {Deformation Behavior and Fracture Strength of Single-Crystal 4H-SiC Determined by Microcantilever Bending Tests},
 volume = {Early Access},
 year = {2024}
}