@article{oai:ynu.repo.nii.ac.jp:00011450,
 author = {Inoue, Fumihiro and Iacovo, Serena and El-Mekki, Zaid and Kim, Soon-Wook and Struyf, Herbert and Beyne, Eric},
 issue = {12},
 journal = {IEEE Electron Device Letters},
 month = {Nov},
 note = {This letter describes the use of area-selective electroless Cu deposition for topography control of Cu-SiCN hybrid bonding pads. The electroless deposition of Cu allows one to obtain protrusions on hybrid bonding Cu pads without further polishing optimization. A recessed Cu pad after chemical mechanical polishing becomes a protrusion after electroless deposition. This indicates that the electroless Cu film was selectively deposited on Cu, without deposition on the SiCN surface. A void-free Cu-Cu bonding interface was observed after annealing at 350 °C with an electroless Cu layer at the interface. 100% electrical connection was obtained at 1.4- μm pitch where the deposition thickness was on target.},
 pages = {1826--1829},
 title = {Area-Selective Electroless Deposition of Cu for Hybrid Bonding},
 volume = {42},
 year = {2021}
}