{"created":"2023-06-20T15:13:20.787472+00:00","id":10337,"links":{},"metadata":{"_buckets":{"deposit":"5f151bc7-e5ac-46a4-a00c-5bbb2bb6f5c8"},"_deposit":{"created_by":3,"id":"10337","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"10337"},"status":"published"},"_oai":{"id":"oai:ynu.repo.nii.ac.jp:00010337","sets":["495:496"]},"author_link":["35852","36681","36682","36680"],"item_2_biblio_info_8":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-01-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"126073","bibliographicVolumeNumber":"384","bibliographic_titles":[{"bibliographic_title":"Physics Letters A"}]}]},"item_2_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS2), the dc Hall effect measurements have practical difficulties. Here, we report the results of the Hall effect measurements using ac magnetic fields and a lock-in detection of the Hall voltage for field effect transistors with ultrathin MoS2 channels. The ac Hall effect measurements have some advantages over the dc measurements. The carrier concentration and the Hall mobility were estimated as a function of gate voltage from the results of the ac Hall effect measurements. They used a magnetic field strength that was lower by two orders of magnitude than those used in prior studies on MoS2 devices, which relied on dc magnetic fields.","subitem_description_type":"Abstract"}]},"item_2_publisher_35":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Elsevier"}]},"item_2_relation_13":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"info:doi/10.1016/j.physleta.2019.126073","subitem_relation_type_select":"DOI"}}]},"item_2_source_id_11":{"attribute_name":"書誌レコードID","attribute_value_mlt":[{"subitem_source_identifier":"AA00774015","subitem_source_identifier_type":"NCID"}]},"item_2_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03759601","subitem_source_identifier_type":"ISSN"}]},"item_2_text_4":{"attribute_name":"著者所属","attribute_value_mlt":[{"subitem_text_value":"Department of Physics, Yokohama National University, Hodogaya 79-5, Yokohama 240-8501, Japan"}]},"item_2_version_type_18":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shimazu, Yoshihiro"}],"nameIdentifiers":[{"nameIdentifier":"35852","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"70235612","nameIdentifierScheme":"e-Rad","nameIdentifierURI":"https://kaken.nii.ac.jp/ja/search/?qm=70235612"}]},{"creatorNames":[{"creatorName":"Iwabuchi, Tatsuya"}],"nameIdentifiers":[{"nameIdentifier":"36680","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, Kensuke"}],"nameIdentifiers":[{"nameIdentifier":"36681","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shioya, Inoru"}],"nameIdentifiers":[{"nameIdentifier":"36682","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2022-02-01"}],"displaytype":"detail","filename":"MoS2Hall.pdf","filesize":[{"value":"256.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"MoS2Hall.pdf","url":"https://ynu.repo.nii.ac.jp/record/10337/files/MoS2Hall.pdf"},"version_id":"a5d9ff87-052a-47d4-b845-5425f472d6ae"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"Hall effect","subitem_subject_scheme":"Other"},{"subitem_subject":"Molybdenum disulfide","subitem_subject_scheme":"Other"},{"subitem_subject":"Transition-metal dichalcogenide","subitem_subject_scheme":"Other"},{"subitem_subject":"Two-dimensional material","subitem_subject_scheme":"Other"},{"subitem_subject":"Carrier density","subitem_subject_scheme":"Other"},{"subitem_subject":"Field effect transistor","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels"}]},"item_type_id":"2","owner":"3","path":["496"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-03-02"},"publish_date":"2020-03-02","publish_status":"0","recid":"10337","relation_version_is_last":true,"title":["Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-06-20T18:31:27.027525+00:00"}