@article{oai:ynu.repo.nii.ac.jp:00010337,
 author = {Shimazu, Yoshihiro and Iwabuchi, Tatsuya and Arai, Kensuke and Shioya, Inoru},
 issue = {3},
 journal = {Physics Letters A},
 month = {Jan},
 note = {Hall effect measurements conventionally rely on the use of dc magnetic fields. For electronic devices made of ultrathin semiconducting materials, such as molybdenum disulfide (MoS2), the dc Hall effect measurements have practical difficulties. Here, we report the results of the Hall effect measurements using ac magnetic fields and a lock-in detection of the Hall voltage for field effect transistors with ultrathin MoS2 channels. The ac Hall effect measurements have some advantages over the dc measurements. The carrier concentration and the Hall mobility were estimated as a function of gate voltage from the results of the ac Hall effect measurements. They used a magnetic field strength that was lower by two orders of magnitude than those used in prior studies on MoS2 devices, which relied on dc magnetic fields.},
 title = {Hall effect measurements using low ac magnetic fields and lock-in technique on field effect transistors with molybdenum disulfide channels},
 volume = {384},
 year = {2020}
}