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High-performance planar-type electron source based on a graphene-oxide-semiconductor structure
http://hdl.handle.net/10131/00012520
http://hdl.handle.net/10131/00012520aec02c0a-b963-4c4a-a16c-7bb2ef5154e2
名前 / ファイル | ライセンス | アクション |
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2019.Murakami,K.APL.114.213501.pdf (1.6 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-05-31 | |||||
タイトル | ||||||
タイトル | High-performance planar-type electron source based on a graphene-oxide-semiconductor structure | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Murakami, Katsuhisa
× Murakami, Katsuhisa× Miyaji, Joji× Furuya, Ryo× Adachi, Manabu× Nagao, Masayoshi× Neo, Yoichiro× Takao, Yoshinori× Yamada, Yoichi× Sasaki, Masahiro× Mimura, Hidenori |
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著者所属 | ||||||
National Institute of Advanced Industrial Science and Technology / Faculty of Pure and Applied Sciences, University of Tsukuba | ||||||
著者所属 | ||||||
National Institute of Advanced Industrial Science and Technology / Research Institute of Electronics, Shizuoka University | ||||||
著者所属 | ||||||
National Institute of Advanced Industrial Science and Technology / Department of Mechanical Engineering, Materials Science, and OceanEngineering, Yokohama National University | ||||||
著者所属 | ||||||
National Institute of Advanced Industrial Science and Technology / Faculty of Pure and Applied Sciences, University of Tsukuba | ||||||
著者所属 | ||||||
National Institute of Advanced Industrial Science and Technology | ||||||
著者所属 | ||||||
Research Institute of Electronics, Shizuoka University | ||||||
著者所属 | ||||||
Division of Systems Research, Yokohama National University | ||||||
著者所属 | ||||||
Faculty of Pure and Applied Sciences, University of Tsukuba | ||||||
著者所属 | ||||||
Faculty of Pure and Applied Sciences, University of Tsukuba | ||||||
著者所属 | ||||||
Research Institute of Electronics, Shizuoka University | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A graphene-oxide-semiconductor (GOS) planar-type electron source was fabricated by direct synthesis of graphene on an oxide layer via low-pressure chemical vapor deposition. It achieved a maximum electron emission efficiency of 32.1% by suppressing the electron inelastic scattering within the topmost gate electrode using a graphene electrode. In addition, an electron emission current density of 100 mA/cm^2 was observed at an electron emission efficiency of 16.2%. The electron energy spread was well fitted to Maxwell-Boltzmann distribution, which indicates that the emitted electrons are the thermally equilibrium state within the electron source. The full-width at half-maximum energy spread of the emitted electrons was approximately 1.1 eV. The electron emission efficiency did not deteriorate after more than 42 h of direct current operation. Thus, the GOS planar-type electron source has the potential to be an excellent electron gun for electron microscopy. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (https://aip.scitation.org/doi/10.1063/1.5091585) and may be found at [https://doi.org/10.1063/1.5091585]. | |||||
書誌情報 |
Applied physics letters 巻 114, 号 21, 発行日 2019-05-30 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 10773118 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11868096 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1063/1.5091585 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | AIP Publishing |