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Nonlinear terahertz dynamics of Dirac electrons in Bi thin films
http://hdl.handle.net/10131/00012516
http://hdl.handle.net/10131/000125165527ef65-bdaf-47c8-af0d-886290bcaf6d
名前 / ファイル | ライセンス | アクション |
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107560P (1).pdf (579.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2019-05-29 | |||||
タイトル | ||||||
タイトル | Nonlinear terahertz dynamics of Dirac electrons in Bi thin films | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Bismuth, Thin films, Antimony, Electrons, Transmittance, Metalloids, Plasma | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Katayama, Ikufumi
× Katayama, Ikufumi× Minami, Yasuo× Arashida, Yusuke× Handegard, Orjan Sele× Nagao, Tadaaki× Kitajima, Masahiro× Takeda, Jun |
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著者所属 | ||||||
Yokohama National Univ | ||||||
著者所属 | ||||||
Yokohama National Univ,Tokushima Univ. | ||||||
著者所属 | ||||||
Yokohama National Univ. | ||||||
著者所属 | ||||||
National Institute for Materials Science,Hokkaido Univ. | ||||||
著者所属 | ||||||
National Institute for Materials Science,Hokkaido Univ. | ||||||
著者所属 | ||||||
Yokohama National Univ,National Institute for Materials Science | ||||||
著者所属 | ||||||
Yokohama National Univ. | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | By using both linear and nonlinear terahertz spectroscopy on epitaxial Bi and Bi_(1-x)Sb_x thin films, we systematically investigated the linear and nonlinear terahertz dynamics of Dirac electrons. The linear terahertz transmittance was analyzed by the Drude model up to 50 THz, and then the plasma frequency and the damping constant were evaluated as functions of the film thickness and Sb-concentration. We found surface metallic state for Bi ultra-thin films, while semimetal to semiconductor crossover for Bi_(1-x)Sb_x thin films. In the nonlinear terahertz spectroscopy, the terahertz transmittance increases with increasing the field strength, which could be assigned to the carrier acceleration along the Dirac-like band dispersion at the L point in the Brillouin zone. In addition, we observed the terahertz-induced absorption in terahertz-pump and terahertz-probe spectroscopy, which could be assigned to carrier generation due to Zener tunneling in Dirac band structure. The results demonstrate that Bi-related materials are promising candidates for future nonlinear terahertz devices. | |||||
内容記述 | ||||||
内容記述タイプ | Other | |||||
内容記述 | Copyright 2018 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. | |||||
書誌情報 |
Proceedings of SPIE 巻 10756, 発行日 2018-09-14 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0277786X | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1117/12.2320801 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | SPIE |