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Suppression of the polarization dependence of the vertical photoluminescence from InAs/GaAs quantum dots by InGaAs strain-reducing layer
http://hdl.handle.net/10131/8150
http://hdl.handle.net/10131/815018e6b2ce-d6fd-4ed1-a308-275221e61996
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
08pMukai_JJAP2r.pdf (677.8 kB)
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| Item type | 学術雑誌論文 / Journal Article(1) | |||||||||
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| 公開日 | 2012-09-14 | |||||||||
| タイトル | ||||||||||
| タイトル | Suppression of the polarization dependence of the vertical photoluminescence from InAs/GaAs quantum dots by InGaAs strain-reducing layer | |||||||||
| 言語 | en | |||||||||
| 言語 | ||||||||||
| 言語 | eng | |||||||||
| キーワード | ||||||||||
| 言語 | en | |||||||||
| 主題Scheme | Other | |||||||||
| 主題 | quantum dot, polarization | |||||||||
| 資源タイプ | ||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
| 資源タイプ | journal article | |||||||||
| アクセス権 | ||||||||||
| アクセス権 | open access | |||||||||
| アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||||||
| 著者 |
Mukai, Kohki
× Mukai, Kohki
× Nakashima, Kenta
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| 抄録 | ||||||||||
| 内容記述タイプ | Abstract | |||||||||
| 内容記述 | We report the linear polarization features of the vertical photoluminescence from InAs/GaAs self-assembled quantum dots (QDs) embedded in an InGaAs strain-reducing layer. The QD samples were grown by molecular beam epitaxy. We observed the polarization dependence of the vertical photoluminescence intensity that is expected to originate in the in-plane asymmetry of the QD structure. The polarization dependence of the photoluminescence intensity of the QDs was suppressed by increasing the indium composition and the thickness of the strain-reducing layer. We computed the electron wavefunction based on the three-dimensional finite element method to explain the results of the experiments. We found that the symmetry of the wavefunction in the embedded QD is superior to that of the crystallographic QD structure, and that the improvement is attributed to the asymmetric permeation of the wavefunction into the strain-reducing layer. These results will aid in the development of vertical-light-emitting QD devices such as surface-emitting lasers and entangled-photon generators. | |||||||||
| 言語 | en | |||||||||
| 書誌情報 |
en : Japanese Journal of Applied Physics 巻 47, 号 6, p. 5057-5061, ページ数 5, 発行日 2008 |
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| ISSN | ||||||||||
| 収録物識別子タイプ | PISSN | |||||||||
| 収録物識別子 | 00214922 | |||||||||
| 書誌レコードID | ||||||||||
| 収録物識別子タイプ | NCID | |||||||||
| 収録物識別子 | AA12295836 | |||||||||
| フォーマット | ||||||||||
| 内容記述タイプ | Other | |||||||||
| 内容記述 | application/pdf | |||||||||
| 著者版フラグ | ||||||||||
| 出版タイプ | AM | |||||||||
| 出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
| 出版者 | ||||||||||
| 出版者 | The Japan Society of Applied Physics | |||||||||
| 言語 | en | |||||||||
