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Structural and electrical characterization of HBr/O2 plasma damage to Si substrate
http://hdl.handle.net/10131/9077
http://hdl.handle.net/10131/9077b3486517-382c-4c5e-b6e5-c856bb1288e6
名前 / ファイル | ライセンス | アクション |
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Fukasawa-JVSTA-2011-JVTAD6294041301_1.pdf (2.7 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-03-10 | |||||
タイトル | ||||||
タイトル | Structural and electrical characterization of HBr/O2 plasma damage to Si substrate | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Fukasawa, Masanaga
× Fukasawa, Masanaga× Nakakubo, Yoshinori× Matsuda, Asahiko× Takao, Yoshinori× Eriguchi, Koji× Ono, Kouichi× Minami, Masaki× Uesawa, Fumikatsu× Tatsumi, Tetsuya |
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著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19431 | |||||
姓名 | フカサワ, マサナガ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19432 | |||||
姓名 | ナカクボ, ヨシノリ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19433 | |||||
姓名 | マツダ, アサヒコ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | タカオ, ヨシノリ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19435 | |||||
姓名 | エリグチ, コウジ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19436 | |||||
姓名 | オノ, コウイチ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19437 | |||||
姓名 | ミナミ, マサキ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19438 | |||||
姓名 | ウエサワ, フミカツ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19439 | |||||
姓名 | タツミ, テツヤ | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19440 | |||||
姓名 | 中久保, 義則 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19441 | |||||
姓名 | 松田, 朝彦 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | 鷹尾, 祥典 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19443 | |||||
姓名 | 江利口, 浩二 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19444 | |||||
姓名 | 斧, 髙一 | |||||
著者所属 | ||||||
Semiconductor Technology Development Division, Semiconductor Business Group, Professional, Device & Solutions Group, Sony Corporation | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Semiconductor Technology Development Division, Semiconductor Business Group, Professional, Device & Solutions Group, Sony Corporation | ||||||
著者所属 | ||||||
Semiconductor Technology Development Division, Semiconductor Business Group, Professional, Device & Solutions Group, Sony Corporation | ||||||
著者所属 | ||||||
Semiconductor Technology Development Division, Semiconductor Business Group, Professional, Device & Solutions Group, Sony Corporation | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Silicon substrate damage caused by HBr/O2 plasma exposure was investigated by spectroscopic ellipsometry (SE), high-resolution Rutherford backscattering spectroscopy, and transmission electron microscopy. The damage caused by H2, Ar, and O2 plasma exposure was also compared to clarify the ion-species dependence. Although the damage basically consists of a surface oxidized layer and underlying dislocated Si, the damage structure strongly depends on the incident ion species, ion energy, and oxidation during air and plasma exposure. In the case of HBr/O2 plasma exposure, hydrogen generated the deep damaged layer (~10 nm), whereas ion-enhanced diffusion of oxygen, supplied simultaneously by the plasma, caused the thick surface oxidation. In-line monitoring of damage thicknesses by SE, developed with an optimized optical model, showed that the SE can be used to precisely monitor damage thicknesses in mass production. Capacitance-voltage (C-V) characteristics of a damaged layer were studied before and after diluted-HF (DHF) treatment. Results showed that a positive charge is generated at the surface oxide-dislocated Si interface and/or in the bulk oxide after plasma exposure. After DHF treatment, most of the positive charges were removed, while the thickness of the “Si recess” was increased by removing the thick surface oxidized layer. As both the Si recess and remaining dislocated Si, including positive charges, cause the degradation of electrical performance, precise monitoring of the surface structure and understanding its effect on device performance is indispensable for creating advanced devices. | |||||
書誌情報 |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 巻 29, 号 4, p. 041301-1-041301-7, 発行日 2011-06-23 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 15531813 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10635514 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |