WEKO3
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Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices
http://hdl.handle.net/10131/9076
http://hdl.handle.net/10131/9076232ee1ac-57e3-4d38-9629-2d61d0f32a3b
名前 / ファイル | ライセンス | アクション |
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Eriguchi-JVSTA-2011.pdf (808.4 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-03-10 | |||||
タイトル | ||||||
タイトル | Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Eriguchi, Koji
× Eriguchi, Koji× Takao, Yoshinori× Ono, Kouichi |
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著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19416 | |||||
姓名 | エリグチ, コウジ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | タカオ, ヨシノリ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19418 | |||||
姓名 | オノ, コウイチ | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19419 | |||||
姓名 | 江利口, 浩二 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | 鷹尾, 祥典 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19421 | |||||
姓名 | 斧, 髙一 | |||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | A comprehensive model predicting the effects of plasma-induced damage (PID) on parameter variations in advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. The model focuses on the silicon recess structure (Si loss) in the source/drain extension region formed by high-energy ion bombardment during plasma etching. The model includes the following mechanisms: (1) damaged layer formation by ion impact and penetration, (2) Si recess structure formation by a subsequent wet etch, (3) MOSFET performance degradation, and (4) MOSFET parameter variation. Based on a range theory for plasma-etch damage, the thickness of the damaged layer exhibits a power-law dependence on the energy of the ion incident on the surface of Si substrate. Assuming that the damaged layer was formed during a gate or an offset spacer etch process, the depth of Si recess (dR) is a function of the depth profile of the created defect site (ndam), the wet-etch stripping time (tw), and the energy of the incident ion. It was found that dR also showed a power-law dependence on the average ion energy Eion estimated from applied self-dc-bias voltage for various tw. As for MOSFET performance degradation, the threshold voltage (Vth) shifted and the shift (ΔVth) increased with an increase in Eion and a decrease in gate length. This induces an increase in subthreshold leakage current (Ioff) for MOSFET. Technology computer-aided-design simulations were performed to confirm these results. By integrating the presented PID models, parameter variations could be predicted: Using a Monte Carlo method, it was demonstrated that PID increases parameter variations such as Vth and Ioff. It also was found that the variation in Eion induces Vth and Ioff variations, comparable to that induced by other process parameter fluctuations such as dopant fluctuation and gate length. In summary, considering the effects of PID on parameter variations is vital for designing future ultralarge-scale-integrated circuits with billions of built-in MOSFETs. | |||||
書誌情報 |
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 巻 29, 号 4, p. 41303, 発行日 2011-06-23 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 15531813 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10635514 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |