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Two modes of surface roughening during plasma etching of silicon: role of ionized etch products
http://hdl.handle.net/10131/9074
http://hdl.handle.net/10131/90748fb0d778-1b05-41c7-afeb-28e092149de1
名前 / ファイル | ライセンス | アクション |
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1_4903956.pdf (4.0 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-03-10 | |||||
タイトル | ||||||
タイトル | Two modes of surface roughening during plasma etching of silicon: role of ionized etch products | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Nakazaki, Nobuya
× Nakazaki, Nobuya× Tsuda, Hirotaka× Takao, Yoshinori× Eriguchi, Koji× Ono, Kouichi |
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著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19388 | |||||
姓名 | ナカザキ, ノブヤ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19389 | |||||
姓名 | ツダ, ヒロタカ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | タカオ, ヨシノリ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19391 | |||||
姓名 | エリグチ, コウジ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19392 | |||||
姓名 | オノ, コウイチ | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19393 | |||||
姓名 | 中崎, 暢也 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19394 | |||||
姓名 | 津田, 博隆 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 714 | |||||
識別子Scheme | e-Rad | |||||
識別子URI | https://kaken.nii.ac.jp/ja/search/?qm=80552661 | |||||
識別子 | 80552661 | |||||
姓名 | 鷹尾, 祥典 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19396 | |||||
姓名 | 江利口, 浩二 | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19397 | |||||
姓名 | 斧, 髙一 | |||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
著者所属 | ||||||
Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei , by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei : one is the roughening mode at low Ei < 200-300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei , exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei , where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus √Ei curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx + to ionized etch products SiClx + caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors. | |||||
書誌情報 |
Journal of Applied Physics 巻 116, 号 22, p. 223302-1-223302-20, 発行日 2014-12-14 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00218979 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00693547 | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |