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Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas
http://hdl.handle.net/10131/8984
http://hdl.handle.net/10131/8984d8d94826-7ee1-4b69-b8c0-19349fede6b4
名前 / ファイル | ライセンス | アクション |
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本文.pdf (138.3 kB)
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図.pdf (4.6 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2015-02-26 | |||||
タイトル | ||||||
タイトル | Low temperature amorphous silicon carbide thin film formation process on aluminum surface using monomethylsilane gas and trichlorosilane gas | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | silicon carbide, monomethylsilane, aluminum, room temperature | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Habuka, Hitoshi
× Habuka, Hitoshi× Tsuji, Masaki× Hirooka, Azumi |
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著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19144 | |||||
姓名 | ハブカ, ヒトシ | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 19145 | |||||
姓名 | 羽深, 等 | |||||
著者所属 | ||||||
Department of Chemical and Energy Engineering, Yokohama National University | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | The low-temperature chemical vapor deposition process of silicon carbide (SiC) on an aluminum surface was developed. In order to prepare the reactive substrate surface, a silicon interlayer containing silicon dimers at its surface was formed using trichlorosilane gas at 600 oC. Next, the SiC thin film was formed at room temperature using monomethylsilane gas. Silicon, carbon and silicon-carbon bond in the obtained film were detected by various evaluations. The SiC film was amorphous and about 5-nm thick. | |||||
書誌情報 |
JOURNAL OF CRYSTAL GROWTH 巻 401, p. 523-526, 発行日 2014-09-01 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00220248 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00696341 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa |