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Improvement of scanning proe microscopy local oxidation nanolithography
http://hdl.handle.net/10131/8035
http://hdl.handle.net/10131/8035a6413b23-3fb6-49b3-8941-b01cbafc518b
名前 / ファイル | ライセンス | アクション |
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takemura1.pdf (481.7 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2012-03-26 | |||||
タイトル | ||||||
タイトル | Improvement of scanning proe microscopy local oxidation nanolithography | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Nishimura, Shinya
× Nishimura, Shinya× Toyofuku, Takashi× Miyashita, Kazuya× Takemura, Yasushi× Shirakashi, Jun-ichi |
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著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18721 | |||||
姓名 | ニシムラ, シンヤ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18722 | |||||
姓名 | トヨフク, タカシ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18723 | |||||
姓名 | ミヤシタ, カズヤ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18724 | |||||
姓名 | タケムラ, ヤスシ | |||||
著者(ヨミ) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18725 | |||||
姓名 | シラカシ, ジュンイチ | |||||
著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 18726 | |||||
姓名 | 竹村, 泰司 | |||||
著者所属 | ||||||
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology | ||||||
著者所属 | ||||||
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology | ||||||
著者所属 | ||||||
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology | ||||||
著者所属 | ||||||
Division of electrical and Computer Engineering, Yokohama National University | ||||||
著者所属 | ||||||
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | In order to investigate the factors that control the growth of Si local oxide, the authors have a comparative study between tapping and contact mode scanning probe microscopy (SPM) local oxidation experiments using the same SPM tip. The authors fabricated Si oxide wires with an average full width at half maximum (FWHM) of 11.0 nm in tapping mode and 54.8 nm in contact mode under the same oxidation conditions. The standard deviations of the FWHM were 2.1 and 12.2 nm in tapping and contact mode experiments, respectively. Furthermore, the authors quantitatively explained the size of the oxide controlled with tapping mode local oxidation using a model based on the oxidation ratio and the rate constant of the oxidation reaction. The oxidation ratio was estimated to be approximately 10% in tapping mode oxidation, which contributes to the 10 nm scale resolution of the oxide. Moreover, the rate constants in the tapping mode local oxidation reaction were larger than those of the contact mode oxidation. This indicates that local oxidation reaction controlled with tapping mode operation is enhanced and results in the stable oxidation, since space charges accumulated in the oxide are easily neutralized by the modulation of the electric field strength. The results imply the use of tapping mode operation for performing controllable local oxidation nanolithography. | |||||
書誌情報 |
American Vacuum Society 巻 27, 号 2, p. 948-952, 発行日 2009 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 10711023 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA10804928 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1116/1.3093907 | |||||
権利 | ||||||
権利情報 | Copyright (2009) American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 | |||||
出版者 | ||||||
出版者 | Journal of vacuum science & technology. Second series. B, Microelectronics and nanometer structures, processing, measurement and phenomena |