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Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas
http://hdl.handle.net/10131/821
http://hdl.handle.net/10131/821df235509-a732-4b8f-b95e-f5251dab0172
名前 / ファイル | ライセンス | アクション |
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ISI-000239218400028-01.pdf (2.9 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2007-05-28 | |||||
タイトル | ||||||
タイトル | Etch rate and surface morphology of polycrystalline beta-silicon carbide using chlorine trifluoride gas | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | silicon carbide, etching, surface roughness, surface morphology | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Habuka, Hitoshi
× Habuka, Hitoshi× Oda, S.× Fukai, Y.× Fukae, K.× Takeuchi, T.× Aihara, M. |
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著者別名 | ||||||
識別子Scheme | WEKO | |||||
識別子 | 15332 | |||||
姓名 | 羽深, 等 | |||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Etch rates of polycrystalline beta-silicon carbide (SiC) substrate in a wide range from less than one to more than 10 mu m/min are obtained using chlorine trifluoride gas in ambient nitrogen at 673-973 K and atmospheric pressure in a horizontal reactor. Over the chlorine trifluoride gas concentrations of 10-100% used in this study, the etch rate increases at the substrate temperatures between 673 and 773 K. Additionally, the etch rate at temperatures higher than 773 K is independent of the substrate temperature, similar to the one obtained using chlorine trifluoride gas concentration of 100%. The root means square roughness of etched surface tends to be small at high temperatures and high chlorine trifluoride gas concentrations. The polycrystalline beta-SiC etch rate can be adjusted using a combination of gas flow rate, chlorine trifluoride gas concentration, and substrate temperature in order to obtain surfaces suitable for various purposes. (c) 2006 Elsevier B.V All rights reserved. | |||||
書誌情報 |
Thin Solid Films 巻 514, 号 1/2, p. 193-197, 発行日 2006-08-30 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 00406090 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA00863068 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.tsf.2006.02.099 | |||||
権利 | ||||||
権利情報 | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structual formatting and other quality control mechanisms , may not be reflected in this document. Changes may have been to this work since it was submitted for publication. | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | Elsevier Science S.A.. | |||||
資源タイプ | ||||||
内容記述タイプ | Other | |||||
内容記述 | postprint |