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Low-power-consumption, high-current-density, and propellantless cathode using graphene-oxide-semiconductor structure array
http://hdl.handle.net/10131/00013265
http://hdl.handle.net/10131/000132653fb06fdd-7af6-4f9f-a281-05ad11363b4a
名前 / ファイル | ライセンス | アクション |
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Manuscript_Revised.pdf (1.7 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2020-04-21 | |||||
タイトル | ||||||
タイトル | Low-power-consumption, high-current-density, and propellantless cathode using graphene-oxide-semiconductor structure array | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | Microspacecraft, Neutralizer, Graphene-oxide-semiconductor, Electron sources, Electrodynamic tether | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
著者 |
Ryo, Furuya
× Ryo, Furuya× Yoshinori, Takao× Masayoshi, Nagao× Katsuhisa, Murakami |
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著者所属 | ||||||
Department of Mechanical Engineering, Materials Science, and Ocean Engineering,Yokohama National University | ||||||
著者所属 | ||||||
@Division of Systems Research, Yokohama National University@@Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology@@Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology | ||||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Graphene-oxide-semiconductor (GOS) planar-type electron sources—which consist of a graphene electrode layer, a thin SiO2 insulator, and a Si substrate—can be driven by applying gate biases of 5–15 V to produce high emission current densities of 10–100 mA/cm2. In this study, propellantless cathodes using GOS electron sources are developed for aerospace applications. Because a single emission site usually has an area smaller than 100 μm × 100 μm, its maximum emission current is below 10 μA. To increase the emission current to several milliamperes or more, the total emission area must be expanded. However, it is difficult to increase the emission current by merely enlarging a single emission area because the graphene layer acts not only as the gate electrode but also as a series resistor, which means that the emission current density decreases as the effective gate bias decreases. Thus, the optimum relationship between the area of a single emission site and the emission current of the site array is investigated, showing a result that an electron source with hundreds of 100 μm × 100 μm sites on a 3 mm × 3 mm wafer produces an emission current of 6.0 mA at a gate bias of 11.1 V. | |||||
書誌情報 |
Acta Astronautica en : Acta Astronautica 巻 174, p. 48-54, 発行日 2020-04-15 |
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ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0094-5765 | |||||
書誌レコードID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AA11521758 | |||||
DOI | ||||||
関連タイプ | isVersionOf | |||||
識別子タイプ | DOI | |||||
関連識別子 | info:doi/10.1016/j.actaastro.2020.04.014 | |||||
著者版フラグ | ||||||
出版タイプ | AM | |||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||
出版者 | ||||||
出版者 | Elsevier | |||||
関係URI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | https://doi.org/10.1016/j.actaastro.2020.04.014 | |||||
関連名称 | https://doi.org/10.1016/j.actaastro.2020.04.014 |